BSH114,215 NXP

Description: MOSFET N-CH 100V 500MA TO236AB, Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-236AB, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 360mW (Ta), 830mW (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).