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BSH121,135

BSH121,135 Nexperia


BSH121-38172.pdf
Hersteller: Nexperia
MOSFET TAPE13 PWR-MOS
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Technische Details BSH121,135 Nexperia

Description: MOSFET N-CH 75V 300MA SOT323, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 4.5V, Power Dissipation (Max): 700mW (Tc), Vgs(th) (Max) @ Id: 1.3V @ 1mA, Supplier Device Package: SOT-323, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V.

Weitere Produktangebote BSH121,135

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BSH121,135 BSH121,135 Hersteller : Nexperia USA Inc. BSH121.pdf Description: MOSFET N-CH 75V 300MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 4.5V
Power Dissipation (Max): 700mW (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSH121,135 BSH121,135 Hersteller : Nexperia USA Inc. BSH121.pdf Description: MOSFET N-CH 75V 300MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 4.5V
Power Dissipation (Max): 700mW (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH