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BSH205,215

BSH205,215 NXP USA Inc.

BSH205.pdf Hersteller: NXP USA Inc.
Description: MOSFET P-CH 12V 750MA TO236AB
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 430mA, 4.5V
Power Dissipation (Max): 417mW (Ta)
Vgs(th) (Max) @ Id: 680mV @ 1mA (Typ)
Supplier Device Package: SOT-23 (TO-236AB)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 9.6 V
auf Bestellung 118918 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1567+0.46 EUR
Mindestbestellmenge: 1567
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Technische Details BSH205,215 NXP USA Inc.

Description: MOSFET P-CH 12V 750MA TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), Rds On (Max) @ Id, Vgs: 400mOhm @ 430mA, 4.5V, Power Dissipation (Max): 417mW (Ta), Vgs(th) (Max) @ Id: 680mV @ 1mA (Typ), Supplier Device Package: SOT-23 (TO-236AB), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 9.6 V.

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BSH205,215 Hersteller : NXP PHGLS17452-1.pdf?t.download=true&u=5oefqw Description: NXP - BSH205,215 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 121418 Stücke:
Lieferzeit 14-21 Tag (e)
BSH205,215 BSH205,215 Hersteller : NEXPERIA 169847868610705bsh205.pdf Trans MOSFET P-CH 12V 0.75A 3-Pin SOT-23 T/R
Produkt ist nicht verfügbar
BSH205,215 BSH205,215 Hersteller : NXP USA Inc. BSH205.pdf Description: MOSFET P-CH 12V 750MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 430mA, 4.5V
Power Dissipation (Max): 417mW (Ta)
Vgs(th) (Max) @ Id: 680mV @ 1mA (Typ)
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 9.6 V
Produkt ist nicht verfügbar
BSH205,215 BSH205,215 Hersteller : Nexperia BSH205-3083166.pdf MOSFET TAPE7 MOSFET
Produkt ist nicht verfügbar