BSH205,215 NXP Semiconductors
| Anzahl | Privatkunde |
|---|---|
| 762+ | 0.87 EUR |
| 1000+ | 0.79 EUR |
| 10000+ | 0.69 EUR |
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Technische Details BSH205,215 NXP Semiconductors
Description: SMALL SIGNAL FIELD-EFFECT TRANSI, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), Rds On (Max) @ Id, Vgs: 400mOhm @ 430mA, 4.5V, Power Dissipation (Max): 417mW (Ta), Vgs(th) (Max) @ Id: 680mV @ 1mA (Typ), Supplier Device Package: SOT-23 (TO-236AB), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 9.6 V.
Weitere Produktangebote BSH205,215 nach Preis ab 0.69 EUR bis 1.14 EUR
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BSH205,215 | NXP Semiconductors |
 Trans MOSFET P-CH 12V 0.75A 3-Pin TO-236AB T/R |
auf Bestellung 42797 Stücke: Lieferzeit 14-21 Tag (e) |
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BSH205,215 | Nexperia USA Inc. |
Description: SMALL SIGNAL FIELD-EFFECT TRANSI Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 750mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 430mA, 4.5V Power Dissipation (Max): 417mW (Ta) Vgs(th) (Max) @ Id: 680mV @ 1mA (Typ) Supplier Device Package: SOT-23 (TO-236AB) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 9.6 V |
auf Bestellung 108280 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSH205,215 |
|
Hersteller: NXP Semiconductors
Trans MOSFET P-CH 12V 0.75A 3-Pin TO-236AB T/R
Trans MOSFET P-CH 12V 0.75A 3-Pin TO-236AB T/R
auf Bestellung 42797 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 762+ | 0.87 EUR |
| 1000+ | 0.79 EUR |
| 10000+ | 0.69 EUR |
| BSH205,215 |
|
Hersteller: Nexperia USA Inc.
Description: SMALL SIGNAL FIELD-EFFECT TRANSI
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 430mA, 4.5V
Power Dissipation (Max): 417mW (Ta)
Vgs(th) (Max) @ Id: 680mV @ 1mA (Typ)
Supplier Device Package: SOT-23 (TO-236AB)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 9.6 V
Description: SMALL SIGNAL FIELD-EFFECT TRANSI
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 430mA, 4.5V
Power Dissipation (Max): 417mW (Ta)
Vgs(th) (Max) @ Id: 680mV @ 1mA (Typ)
Supplier Device Package: SOT-23 (TO-236AB)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 9.6 V
auf Bestellung 108280 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 470+ | 1.14 EUR |