
BSH205,215 NXP Semiconductors
auf Bestellung 76107 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
1916+ | 0.28 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BSH205,215 NXP Semiconductors
Description: MOSFET P-CH 12V 750MA TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), Rds On (Max) @ Id, Vgs: 400mOhm @ 430mA, 4.5V, Power Dissipation (Max): 417mW (Ta), Vgs(th) (Max) @ Id: 680mV @ 1mA (Typ), Supplier Device Package: SOT-23 (TO-236AB), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 9.6 V.
Weitere Produktangebote BSH205,215 nach Preis ab 0.28 EUR bis 0.31 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
---|---|---|---|---|---|---|---|---|---|
![]() |
BSH205,215 | Hersteller : NXP Semiconductors |
![]() |
auf Bestellung 42807 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||
![]() |
BSH205,215 | Hersteller : NXP USA Inc. |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 750mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 430mA, 4.5V Power Dissipation (Max): 417mW (Ta) Vgs(th) (Max) @ Id: 680mV @ 1mA (Typ) Supplier Device Package: SOT-23 (TO-236AB) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 9.6 V |
auf Bestellung 118914 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||
BSH205,215 | Hersteller : NXP |
![]() tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 121418 Stücke: Lieferzeit 14-21 Tag (e) |
||||||
![]() |
BSH205,215 | Hersteller : NEXPERIA |
![]() |
Produkt ist nicht verfügbar |
|||||
![]() |
BSH205,215 | Hersteller : NXP USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 750mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 430mA, 4.5V Power Dissipation (Max): 417mW (Ta) Vgs(th) (Max) @ Id: 680mV @ 1mA (Typ) Supplier Device Package: SOT-23 (TO-236AB) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 9.6 V |
Produkt ist nicht verfügbar |
|||||
![]() |
BSH205,215 | Hersteller : Nexperia |
![]() |
Produkt ist nicht verfügbar |