BSL202SNH6327XTSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 7.5A TSOP-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 30µA
Supplier Device Package: PG-TSOP6-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1147 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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Technische Details BSL202SNH6327XTSA1 Infineon Technologies
Description: MOSFET N-CH 20V 7.5A TSOP-6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 4.5V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 1.2V @ 30µA, Supplier Device Package: PG-TSOP6-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1147 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BSL202SNH6327XTSA1 nach Preis ab 0.29 EUR bis 1.39 EUR
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BSL202SNH6327XTSA1 | Infineon Technologies |
MOSFETs SMALL SIGNAL+N-CH |
auf Bestellung 52 Stücke: Lieferzeit 10-14 Tag (e) |
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BSL202SNH6327XTSA1 | Infineon Technologies |
Description: MOSFET N-CH 20V 7.5A TSOP-6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 30µA Supplier Device Package: PG-TSOP6-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1147 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3164 Stücke: Lieferzeit 10-14 Tag (e) |
|
| BSL202SNH6327XTSA1 |
|
Hersteller: Infineon Technologies
MOSFETs SMALL SIGNAL+N-CH
MOSFETs SMALL SIGNAL+N-CH
auf Bestellung 52 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.17 EUR |
| 10+ | 0.81 EUR |
| 100+ | 0.52 EUR |
| 500+ | 0.41 EUR |
| 1000+ | 0.37 EUR |
| 3000+ | 0.31 EUR |
| 6000+ | 0.29 EUR |
| BSL202SNH6327XTSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 7.5A TSOP-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 30µA
Supplier Device Package: PG-TSOP6-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1147 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 20V 7.5A TSOP-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 30µA
Supplier Device Package: PG-TSOP6-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1147 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3164 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 13+ | 1.39 EUR |
| 21+ | 0.86 EUR |
| 100+ | 0.56 EUR |
| 500+ | 0.43 EUR |
| 1000+ | 0.39 EUR |