Technische Details BSL211SPL6327 INF
Description: P-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), Rds On (Max) @ Id, Vgs: 67mOhm @ 4.7A, 4.5V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 1.2V @ 25µA, Supplier Device Package: PG-TSOP6-6-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 15 V.
Weitere Produktangebote BSL211SPL6327
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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BSL211SP L6327 | Hersteller : INFINEON | 0828NO |
auf Bestellung 5575 Stücke: Lieferzeit 21-28 Tag (e) |
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BSL211SP L6327 | Hersteller : INFINEON | SOT163 |
auf Bestellung 7500 Stücke: Lieferzeit 21-28 Tag (e) |
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BSL211SP L6327 | Hersteller : INFINEON | SOT-163 0801+ |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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BSL211SPL6327 | Hersteller : Infineon Technologies |
Description: P-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) Rds On (Max) @ Id, Vgs: 67mOhm @ 4.7A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 25µA Supplier Device Package: PG-TSOP6-6-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 15 V |
Produkt ist nicht verfügbar |
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BSL211SP L6327 | Hersteller : Infineon Technologies | MOSFET P-Ch -20V 4.7A TSOP-6 |
Produkt ist nicht verfügbar |