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BSL211SPH6327XTSA1

BSL211SPH6327XTSA1 Infineon Technologies

Infineon-BSL211SP-DS-v02_00-en.pdf?fileId=db3a304342c787030142db9dab0e1414
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 4.7A TSOP-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 25µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.33 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details BSL211SPH6327XTSA1 Infineon Technologies

Description: MOSFET P-CH 20V 4.7A TSOP-6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), Rds On (Max) @ Id, Vgs: 67mOhm @ 4.7A, 4.5V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 1.2V @ 25µA, Supplier Device Package: PG-TSOP6-6, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 15 V, Qualification: AEC-Q101.

Weitere Produktangebote BSL211SPH6327XTSA1 nach Preis ab 0.26 EUR bis 1.59 EUR

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BSL211SPH6327XTSA1 BSL211SPH6327XTSA1 INFINEON TECHNOLOGIES BSL211SPH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 2W; PG-TSOP-6
Case: PG-TSOP-6
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -4.7A
Drain-source voltage: -20V
On-state resistance: 67mΩ
Power dissipation: 2W
Gate-source voltage: ±12V
auf Bestellung 2879 Stücke:
Lieferzeit 14-21 Tag (e)
91+0.79 EUR
144+0.5 EUR
203+0.35 EUR
250+0.32 EUR
500+0.29 EUR
1000+0.26 EUR
Mindestbestellmenge: 91 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSL211SPH6327XTSA1 BSL211SPH6327XTSA1 Infineon Technologies Infineon-BSL211SP-DS-v02_00-en.pdf?fileId=db3a304342c787030142db9dab0e1414 Description: MOSFET P-CH 20V 4.7A TSOP-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 25µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 4095 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.37 EUR
21+0.85 EUR
100+0.55 EUR
500+0.42 EUR
1000+0.38 EUR
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSL211SPH6327XTSA1 BSL211SPH6327XTSA1 Infineon Technologies Infineon_BSL211SP_DS_v02_00_en.pdf MOSFETs SMALL SIGNAL+P-CH
auf Bestellung 11377 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.59 EUR
10+0.99 EUR
100+0.65 EUR
500+0.51 EUR
1000+0.45 EUR
3000+0.4 EUR
6000+0.35 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSL211SPH6327XTSA1 BSL211SPH6327XTSA1-dte.pdf
BSL211SPH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 2W; PG-TSOP-6
Case: PG-TSOP-6
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -4.7A
Drain-source voltage: -20V
On-state resistance: 67mΩ
Power dissipation: 2W
Gate-source voltage: ±12V
auf Bestellung 2879 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
91+0.79 EUR
144+0.5 EUR
203+0.35 EUR
250+0.32 EUR
500+0.29 EUR
1000+0.26 EUR
Mindestbestellmenge: 91 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSL211SPH6327XTSA1 Infineon-BSL211SP-DS-v02_00-en.pdf?fileId=db3a304342c787030142db9dab0e1414
BSL211SPH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 4.7A TSOP-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 25µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 4095 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
13+1.37 EUR
21+0.85 EUR
100+0.55 EUR
500+0.42 EUR
1000+0.38 EUR
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSL211SPH6327XTSA1 Infineon_BSL211SP_DS_v02_00_en.pdf
BSL211SPH6327XTSA1
Hersteller: Infineon Technologies
MOSFETs SMALL SIGNAL+P-CH
auf Bestellung 11377 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+1.59 EUR
10+0.99 EUR
100+0.65 EUR
500+0.51 EUR
1000+0.45 EUR
3000+0.4 EUR
6000+0.35 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH