Technische Details BSL211SPH6327XTSA1 Infineon Technologies
Description: INFINEON - BSL211SPH6327XTSA1 - Leistungs-MOSFET, p-Kanal, 20 V, 4.7 A, 0.054 ohm, TSOP, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 20V, rohsCompliant: YES, Dauer-Drainstrom Id: 4.7A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: Y, MSL: MSL 1 - unbegrenzt, Gate-Source-Schwellenspannung, max.: 900mV, Verlustleistung: 2W, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: TSOP, Anzahl der Pins: 6Pin(s), Produktpalette: OptiMOS P, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: p-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 4.5V, Drain-Source-Durchgangswiderstand: 0.054ohm.
Weitere Produktangebote BSL211SPH6327XTSA1 nach Preis ab 0.3 EUR bis 1.98 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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BSL211SPH6327XTSA1 | Infineon Technologies |
 Trans MOSFET P-CH 20V 4.7A 6-Pin TSOP T/R Automotive AEC-Q101 |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSL211SPH6327XTSA1 | Infineon Technologies |
Description: MOSFET P-CH 20V 4.7A TSOP-6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) Rds On (Max) @ Id, Vgs: 67mOhm @ 4.7A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 25µA Supplier Device Package: PG-TSOP6-6 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 15 V Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSL211SPH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 2W; PG-TSOP-6 Power dissipation: 2W Polarisation: unipolar Technology: OptiMOS™ P Drain current: -4.7A Kind of channel: enhancement Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±12V Case: PG-TSOP-6 On-state resistance: 67mΩ Mounting: SMD |
auf Bestellung 2829 Stücke: Lieferzeit 14-21 Tag (e) |
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BSL211SPH6327XTSA1 | Infineon Technologies |
Trans MOSFET P-CH 20V 4.7A 6-Pin TSOP T/R Automotive AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSL211SPH6327XTSA1 | Infineon Technologies |
Trans MOSFET P-CH 20V 4.7A 6-Pin TSOP T/R Automotive AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSL211SPH6327XTSA1 | Infineon Technologies |
MOSFETs SMALL SIGNAL+P-CH |
auf Bestellung 11193 Stücke: Lieferzeit 10-14 Tag (e) |
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BSL211SPH6327XTSA1 | Infineon Technologies |
Description: MOSFET P-CH 20V 4.7A TSOP-6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) Rds On (Max) @ Id, Vgs: 67mOhm @ 4.7A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 25µA Supplier Device Package: PG-TSOP6-6 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 15 V Qualification: AEC-Q101 |
auf Bestellung 3929 Stücke: Lieferzeit 10-14 Tag (e) |
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BSL211SPH6327XTSA1 | INFINEON |
Description: INFINEON - BSL211SPH6327XTSA1 - Leistungs-MOSFET, p-Kanal, 20 V, 4.7 A, 0.054 ohm, TSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 4.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 900mV Verlustleistung: 2W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TSOP Anzahl der Pins: 6Pin(s) Produktpalette: OptiMOS P productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 4.5V Drain-Source-Durchgangswiderstand: 0.054ohm |
auf Bestellung 1870 Stücke: Lieferzeit 14-21 Tag (e) |
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BSL211SPH6327XTSA1 | INFINEON |
Description: INFINEON - BSL211SPH6327XTSA1 - Leistungs-MOSFET, p-Kanal, 20 V, 4.7 A, 0.054 ohm, TSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 4.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 900mV Verlustleistung: 2W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TSOP Anzahl der Pins: 6Pin(s) Produktpalette: OptiMOS P productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 4.5V Drain-Source-Durchgangswiderstand: 0.054ohm |
auf Bestellung 1870 Stücke: Lieferzeit 14-21 Tag (e) |
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| BSL211SPH6327XTSA1 |
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Hersteller: Infineon Technologies
Trans MOSFET P-CH 20V 4.7A 6-Pin TSOP T/R Automotive AEC-Q101
Trans MOSFET P-CH 20V 4.7A 6-Pin TSOP T/R Automotive AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.32 EUR |
| 6000+ | 0.3 EUR |
| BSL211SPH6327XTSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 4.7A TSOP-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 25µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET P-CH 20V 4.7A TSOP-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 25µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.48 EUR |
| BSL211SPH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 2W; PG-TSOP-6
Power dissipation: 2W
Polarisation: unipolar
Technology: OptiMOS™ P
Drain current: -4.7A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Case: PG-TSOP-6
On-state resistance: 67mΩ
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 2W; PG-TSOP-6
Power dissipation: 2W
Polarisation: unipolar
Technology: OptiMOS™ P
Drain current: -4.7A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Case: PG-TSOP-6
On-state resistance: 67mΩ
Mounting: SMD
auf Bestellung 2829 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 91+ | 0.94 EUR |
| 169+ | 0.5 EUR |
| 231+ | 0.37 EUR |
| 257+ | 0.33 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.3 EUR |
| BSL211SPH6327XTSA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET P-CH 20V 4.7A 6-Pin TSOP T/R Automotive AEC-Q101
Trans MOSFET P-CH 20V 4.7A 6-Pin TSOP T/R Automotive AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 127+ | 1.36 EUR |
| 208+ | 0.82 EUR |
| 286+ | 0.58 EUR |
| 500+ | 0.46 EUR |
| 1000+ | 0.32 EUR |
| BSL211SPH6327XTSA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET P-CH 20V 4.7A 6-Pin TSOP T/R Automotive AEC-Q101
Trans MOSFET P-CH 20V 4.7A 6-Pin TSOP T/R Automotive AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 127+ | 1.36 EUR |
| 208+ | 0.8 EUR |
| 286+ | 0.56 EUR |
| 500+ | 0.44 EUR |
| 1000+ | 0.3 EUR |
| BSL211SPH6327XTSA1 |
|
Hersteller: Infineon Technologies
MOSFETs SMALL SIGNAL+P-CH
MOSFETs SMALL SIGNAL+P-CH
auf Bestellung 11193 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.89 EUR |
| 10+ | 0.89 EUR |
| 100+ | 0.73 EUR |
| 500+ | 0.6 EUR |
| 1000+ | 0.52 EUR |
| 3000+ | 0.44 EUR |
| 6000+ | 0.42 EUR |
| BSL211SPH6327XTSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 4.7A TSOP-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 25µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET P-CH 20V 4.7A TSOP-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 25µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 3929 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 1.93 EUR |
| 18+ | 1.2 EUR |
| 50+ | 0.89 EUR |
| 100+ | 0.79 EUR |
| 500+ | 0.61 EUR |
| BSL211SPH6327XTSA1 |
|
Hersteller: INFINEON
Description: INFINEON - BSL211SPH6327XTSA1 - Leistungs-MOSFET, p-Kanal, 20 V, 4.7 A, 0.054 ohm, TSOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 4.7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 900mV
Verlustleistung: 2W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TSOP
Anzahl der Pins: 6Pin(s)
Produktpalette: OptiMOS P
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 4.5V
Drain-Source-Durchgangswiderstand: 0.054ohm
Description: INFINEON - BSL211SPH6327XTSA1 - Leistungs-MOSFET, p-Kanal, 20 V, 4.7 A, 0.054 ohm, TSOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 4.7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 900mV
Verlustleistung: 2W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TSOP
Anzahl der Pins: 6Pin(s)
Produktpalette: OptiMOS P
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 4.5V
Drain-Source-Durchgangswiderstand: 0.054ohm
auf Bestellung 1870 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 127+ | 1.98 EUR |
| 207+ | 1.13 EUR |
| 312+ | 0.69 EUR |
| 500+ | 0.52 EUR |
| 1000+ | 0.48 EUR |
| BSL211SPH6327XTSA1 |
|
Hersteller: INFINEON
Description: INFINEON - BSL211SPH6327XTSA1 - Leistungs-MOSFET, p-Kanal, 20 V, 4.7 A, 0.054 ohm, TSOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 4.7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 900mV
Verlustleistung: 2W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TSOP
Anzahl der Pins: 6Pin(s)
Produktpalette: OptiMOS P
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 4.5V
Drain-Source-Durchgangswiderstand: 0.054ohm
Description: INFINEON - BSL211SPH6327XTSA1 - Leistungs-MOSFET, p-Kanal, 20 V, 4.7 A, 0.054 ohm, TSOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 4.7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 900mV
Verlustleistung: 2W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TSOP
Anzahl der Pins: 6Pin(s)
Produktpalette: OptiMOS P
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 4.5V
Drain-Source-Durchgangswiderstand: 0.054ohm
auf Bestellung 1870 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 127+ | 1.98 EUR |
| 207+ | 1.13 EUR |
| 312+ | 0.69 EUR |
| 500+ | 0.52 EUR |
| 1000+ | 0.48 EUR |