BSL214NL6327HTSA1 ROCHESTER ELECTRONICS
Hersteller: ROCHESTER ELECTRONICS
Description: ROCHESTER ELECTRONICS - BSL214NL6327HTSA1 - BSL214 250V-600V SMALL SIGNALOR
tariffCode: 85412100
euEccn: TBC
hazardous: false
productTraceability: No
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
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Technische Details BSL214NL6327HTSA1 ROCHESTER ELECTRONICS
Description: MOSFET 2N-CH 20V 1.5A TSOP6-6, Supplier Device Package: PG-TSOP6-6, Vgs(th) (Max) @ Id: 1.2V @ 3.7µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V, Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 1.5A, Drain to Source Voltage (Vdss): 20V, Power - Max: 500mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).
Weitere Produktangebote BSL214NL6327HTSA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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BSL214NL6327HTSA1 | Infineon Technologies |
Description: MOSFET 2N-CH 20V 1.5A TSOP6-6 Supplier Device Package: PG-TSOP6-6 Vgs(th) (Max) @ Id: 1.2V @ 3.7µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V Current - Continuous Drain (Id) @ 25°C: 1.5A Drain to Source Voltage (Vdss): 20V Power - Max: 500mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BSL214NL6327HTSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 20V 1.5A TSOP6-6
Supplier Device Package: PG-TSOP6-6
Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 20V 1.5A TSOP6-6
Supplier Device Package: PG-TSOP6-6
Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH