Technische Details BSL316CL6327 Infineon technologies
Description: P-CHANNEL MOSFET, Part Status: Active, Supplier Device Package: PG-TSOP6-6, Vgs(th) (Max) @ Id: 2V @ 3.7µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V, Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 94pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 1.4A, 1.5A, Drain to Source Voltage (Vdss): 30V, Power - Max: 500mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Bulk.
Weitere Produktangebote BSL316CL6327
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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BSL316CL6327 | Infineon Technologies |
Description: P-CHANNEL MOSFETPart Status: Active Supplier Device Package: PG-TSOP6-6 Vgs(th) (Max) @ Id: 2V @ 3.7µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V Input Capacitance (Ciss) (Max) @ Vds: 94pF @ 15V Current - Continuous Drain (Id) @ 25°C: 1.4A, 1.5A Drain to Source Voltage (Vdss): 30V Power - Max: 500mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
BSL316C L6327 | Infineon Technologies |
MOSFET N and P-Ch 30V 1.4A TSOP-6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BSL316CL6327 |
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Hersteller: Infineon Technologies
Description: P-CHANNEL MOSFET
Part Status: Active
Supplier Device Package: PG-TSOP6-6
Vgs(th) (Max) @ Id: 2V @ 3.7µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 94pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 1.4A, 1.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Bulk
Description: P-CHANNEL MOSFET
Part Status: Active
Supplier Device Package: PG-TSOP6-6
Vgs(th) (Max) @ Id: 2V @ 3.7µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 94pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 1.4A, 1.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSL316C L6327 |
![]() |
Hersteller: Infineon Technologies
MOSFET N and P-Ch 30V 1.4A TSOP-6
MOSFET N and P-Ch 30V 1.4A TSOP-6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH



