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BSL316CH6327XTSA1

BSL316CH6327XTSA1 Infineon Technologies

BSL316C_rev2+3.pdf?fileId=db3a30431add1d95011aed6aee7702ee
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 1.4A TSOP6-6
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PG-TSOP6-6
Vgs(th) (Max) @ Id: 2V @ 3.7µA
FET Feature: Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 1.4A, 1.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
auf Bestellung 87000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.21 EUR
6000+0.19 EUR
9000+0.18 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details BSL316CH6327XTSA1 Infineon Technologies

Description: MOSFET N/P-CH 30V 1.4A TSOP6-6, Qualification: AEC-Q101, Grade: Automotive, Part Status: Active, Supplier Device Package: PG-TSOP6-6, Vgs(th) (Max) @ Id: 2V @ 3.7µA, FET Feature: Logic Level Gate, 4.5V Drive, Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V, Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 1.4A, 1.5A, Drain to Source Voltage (Vdss): 30V, Power - Max: 500mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel Complementary, Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).

Weitere Produktangebote BSL316CH6327XTSA1 nach Preis ab 0.18 EUR bis 1.12 EUR

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BSL316CH6327XTSA1 BSL316CH6327XTSA1 INFINEON TECHNOLOGIES BSL316CH6327XTSA1.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 1.4/-1.5A; 0.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 1.4/-1.5A
Power dissipation: 0.5W
Case: PG-TSOP-6
Gate-source voltage: ±20V
On-state resistance: 0.191/0.177Ω
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 2
auf Bestellung 2110 Stücke:
Lieferzeit 14-21 Tag (e)
105+0.69 EUR
146+0.49 EUR
173+0.41 EUR
249+0.29 EUR
290+0.25 EUR
500+0.19 EUR
1000+0.18 EUR
Mindestbestellmenge: 105 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSL316CH6327XTSA1 BSL316CH6327XTSA1 Infineon Technologies BSL316C_rev2+3.pdf?fileId=db3a30431add1d95011aed6aee7702ee Description: MOSFET N/P-CH 30V 1.4A TSOP6-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.4A, 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 3.7µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 88291 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.06 EUR
27+0.65 EUR
100+0.42 EUR
500+0.32 EUR
1000+0.29 EUR
Mindestbestellmenge: 17 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSL316CH6327XTSA1 BSL316CH6327XTSA1 Infineon Technologies BSL316C_rev2 3.pdf MOSFETs SMALL SIGNAL+P-CH
auf Bestellung 93685 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.12 EUR
10+0.7 EUR
100+0.45 EUR
500+0.34 EUR
1000+0.3 EUR
3000+0.25 EUR
6000+0.23 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSL316CH6327XTSA1 BSL316CH6327XTSA1.pdf
BSL316CH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 1.4/-1.5A; 0.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 1.4/-1.5A
Power dissipation: 0.5W
Case: PG-TSOP-6
Gate-source voltage: ±20V
On-state resistance: 0.191/0.177Ω
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 2
auf Bestellung 2110 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
105+0.69 EUR
146+0.49 EUR
173+0.41 EUR
249+0.29 EUR
290+0.25 EUR
500+0.19 EUR
1000+0.18 EUR
Mindestbestellmenge: 105 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSL316CH6327XTSA1 BSL316C_rev2+3.pdf?fileId=db3a30431add1d95011aed6aee7702ee
BSL316CH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 1.4A TSOP6-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.4A, 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 3.7µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 88291 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
17+1.06 EUR
27+0.65 EUR
100+0.42 EUR
500+0.32 EUR
1000+0.29 EUR
Mindestbestellmenge: 17 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSL316CH6327XTSA1 BSL316C_rev2 3.pdf
BSL316CH6327XTSA1
Hersteller: Infineon Technologies
MOSFETs SMALL SIGNAL+P-CH
auf Bestellung 93685 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+1.12 EUR
10+0.7 EUR
100+0.45 EUR
500+0.34 EUR
1000+0.3 EUR
3000+0.25 EUR
6000+0.23 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH