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BSL606SNH6327XTSA1

BSL606SNH6327XTSA1 Infineon Technologies

Infineon-BSL606SN-DS-v02_02-en.pdf?fileId=db3a30433c6c52e2013c6ca13340015f
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 4.5A TSOP-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 15µA
Supplier Device Package: PG-TSOP6-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 657 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.28 EUR
6000+0.26 EUR
9000+0.25 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details BSL606SNH6327XTSA1 Infineon Technologies

Description: MOSFET N-CH 60V 4.5A TSOP-6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 4.5A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 2.3V @ 15µA, Supplier Device Package: PG-TSOP6-6, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 657 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote BSL606SNH6327XTSA1 nach Preis ab 0.27 EUR bis 1.36 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
BSL606SNH6327XTSA1 BSL606SNH6327XTSA1 INFINEON TECHNOLOGIES BSL606SNH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; 2W; PG-TSOP-6
Kind of channel: enhancement
Mounting: SMD
Case: PG-TSOP-6
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Drain-source voltage: 60V
Drain current: 4.5A
On-state resistance: 95mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
Polarisation: unipolar
auf Bestellung 3622 Stücke:
Lieferzeit 14-21 Tag (e)
97+0.74 EUR
127+0.57 EUR
169+0.42 EUR
191+0.37 EUR
500+0.28 EUR
1000+0.27 EUR
Mindestbestellmenge: 97 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSL606SNH6327XTSA1 BSL606SNH6327XTSA1 Infineon Technologies Infineon_BSL606SN_DS_v02_02_en-1226330.pdf MOSFETs OptiMOS3 Sm-Signl 60V 60mOhm 1.5A
auf Bestellung 6102 Stücke:
Lieferzeit 10-14 Tag (e)
4+0.85 EUR
10+0.74 EUR
100+0.55 EUR
500+0.44 EUR
1000+0.34 EUR
3000+0.31 EUR
9000+0.27 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSL606SNH6327XTSA1 BSL606SNH6327XTSA1 Infineon Technologies Infineon-BSL606SN-DS-v02_02-en.pdf?fileId=db3a30433c6c52e2013c6ca13340015f Description: MOSFET N-CH 60V 4.5A TSOP-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 15µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 657 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 13202 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.36 EUR
21+0.84 EUR
100+0.54 EUR
500+0.42 EUR
1000+0.37 EUR
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSL606SNH6327XTSA1 BSL606SNH6327XTSA1.pdf
BSL606SNH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; 2W; PG-TSOP-6
Kind of channel: enhancement
Mounting: SMD
Case: PG-TSOP-6
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Drain-source voltage: 60V
Drain current: 4.5A
On-state resistance: 95mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
Polarisation: unipolar
auf Bestellung 3622 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
97+0.74 EUR
127+0.57 EUR
169+0.42 EUR
191+0.37 EUR
500+0.28 EUR
1000+0.27 EUR
Mindestbestellmenge: 97 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSL606SNH6327XTSA1 Infineon_BSL606SN_DS_v02_02_en-1226330.pdf
BSL606SNH6327XTSA1
Hersteller: Infineon Technologies
MOSFETs OptiMOS3 Sm-Signl 60V 60mOhm 1.5A
auf Bestellung 6102 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+0.85 EUR
10+0.74 EUR
100+0.55 EUR
500+0.44 EUR
1000+0.34 EUR
3000+0.31 EUR
9000+0.27 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSL606SNH6327XTSA1 Infineon-BSL606SN-DS-v02_02-en.pdf?fileId=db3a30433c6c52e2013c6ca13340015f
BSL606SNH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 4.5A TSOP-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 15µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 657 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 13202 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
13+1.36 EUR
21+0.84 EUR
100+0.54 EUR
500+0.42 EUR
1000+0.37 EUR
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen  Stück im Wert von  UAH