BSM100GB170DLCHOSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 200A 960W
Input Capacitance (Cies) @ Vce: 7 nF @ 25 V
Current - Collector Cutoff (Max): 200 µA
Power - Max: 960 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 200 A
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 100A
Operating Temperature: -40°C ~ 125°C
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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Technische Details BSM100GB170DLCHOSA1 Infineon Technologies
Description: IGBT MOD 1700V 200A 960W, Input Capacitance (Cies) @ Vce: 7 nF @ 25 V, Current - Collector Cutoff (Max): 200 µA, Power - Max: 960 W, Voltage - Collector Emitter Breakdown (Max): 1700 V, Current - Collector (Ic) (Max): 200 A, Supplier Device Package: Module, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 100A, Operating Temperature: -40°C ~ 125°C, Configuration: Half Bridge, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk.
Weitere Produktangebote BSM100GB170DLCHOSA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| BSM100GB170DLCHOSA1 | Infineon Technologies |
Description: IGBT MOD 1700V 200A 960W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 100A NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 960 W Current - Collector Cutoff (Max): 200 µA Input Capacitance (Cies) @ Vce: 7 nF @ 25 V |
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Im Einkaufswagen Stück im Wert von UAH |
| BSM100GB170DLCHOSA1 |
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 200A 960W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 960 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 7 nF @ 25 V
Description: IGBT MOD 1700V 200A 960W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 960 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 7 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH