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BSM100GB170DLCHOSA1 Infineon Technologies


Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 200A 960W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 960 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 7 nF @ 25 V
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Technische Details BSM100GB170DLCHOSA1 Infineon Technologies

Description: IGBT MOD 1700V 200A 960W, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 100A, NTC Thermistor: No, Supplier Device Package: Module, Current - Collector (Ic) (Max): 200 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 960 W, Current - Collector Cutoff (Max): 200 µA, Input Capacitance (Cies) @ Vce: 7 nF @ 25 V.

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BSM100GB170DLCHOSA1 Hersteller : Infineon Technologies BSM100GB170DLCHOSA1
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BSM100GB170DLCHOSA1 Hersteller : Infineon Technologies Description: IGBT MOD 1700V 200A 960W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 960 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 7 nF @ 25 V
Produkt ist nicht verfügbar