BSM150GB120DN2HOSA1 Infineon Technologies
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Technische Details BSM150GB120DN2HOSA1 Infineon Technologies
Description: IGBT MOD 1200V 210A 1250W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 150A, NTC Thermistor: No, Supplier Device Package: Module, Part Status: Last Time Buy, Current - Collector (Ic) (Max): 210 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 1250 W, Current - Collector Cutoff (Max): 2.8 mA, Input Capacitance (Cies) @ Vce: 11 nF @ 25 V.
Weitere Produktangebote BSM150GB120DN2HOSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| BSM150GB120DN2HOSA1 | Hersteller : Infineon Technologies |
Description: IGBT MOD 1200V 210A 1250W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 150A NTC Thermistor: No Supplier Device Package: Module Part Status: Last Time Buy Current - Collector (Ic) (Max): 210 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1250 W Current - Collector Cutoff (Max): 2.8 mA Input Capacitance (Cies) @ Vce: 11 nF @ 25 V |
Produkt ist nicht verfügbar |
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| BSM150GB120DN2HOSA1 | Hersteller : Infineon Technologies | IGBT Modules MEDIUM POWER 62MM |
Produkt ist nicht verfügbar |