BSM150GB120DN2HOSA1 Infineon Technologies

Description: IGBT MOD 1200V 210A 1250W, Input Capacitance (Cies) @ Vce: 11 nF @ 25 V, Current - Collector Cutoff (Max): 2.8 mA, Power - Max: 1250 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 210 A, Part Status: Last Time Buy, Supplier Device Package: Module, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 150A, Operating Temperature: 150°C (TJ), Configuration: Half Bridge, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.