BSM150GB170DN2E3256HDLA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: BSM150GB170DN2 - INSULATED GATE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 10 nF @ 25 V
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 177.09 EUR |
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Technische Details BSM150GB170DN2E3256HDLA1 Infineon Technologies
Description: BSM150GB170DN2 - INSULATED GATE, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: 2 Independent, Operating Temperature: 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 150A, NTC Thermistor: No, Supplier Device Package: Module, Part Status: Active, Current - Collector (Ic) (Max): 300 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 1250 W, Current - Collector Cutoff (Max): 300 µA, Input Capacitance (Cies) @ Vce: 10 nF @ 25 V.
Weitere Produktangebote BSM150GB170DN2E3256HDLA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| BSM150GB170DN2E3256HDLA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - BSM150GB170DN2E3256HDLA1 - BSM150GB170 INSULATED GATE BIPOLAR TRAN euEccn: TBC hazardous: false productTraceability: Yes-Date/Lot Code usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |