BSM150GB170DN2HOSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IGBT MOD 1700V 220A 1250W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 1.5 mA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
auf Bestellung 21 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 234.76 EUR |
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Technische Details BSM150GB170DN2HOSA1 Infineon Technologies
Description: IGBT MOD 1700V 220A 1250W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 150A, NTC Thermistor: No, Supplier Device Package: Module, Part Status: Obsolete, Current - Collector (Ic) (Max): 220 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 1250 W, Current - Collector Cutoff (Max): 1.5 mA, Input Capacitance (Cies) @ Vce: 20 nF @ 25 V.
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Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| BSM150GB170DN2HOSA1 | Hersteller : Infineon Technologies |
220 A, 1700 V, N-CHANNEL IGBT |
Produkt ist nicht verfügbar |
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| BSM150GB170DN2HOSA1 | Hersteller : Infineon Technologies |
Description: IGBT MOD 1700V 220A 1250W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 150A NTC Thermistor: No Supplier Device Package: Module Part Status: Obsolete Current - Collector (Ic) (Max): 220 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 1250 W Current - Collector Cutoff (Max): 1.5 mA Input Capacitance (Cies) @ Vce: 20 nF @ 25 V |
Produkt ist nicht verfügbar |