BSM180D12P2C101 ROHM Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 1+ | 974.97 EUR |
| 12+ | 917.51 EUR |
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Technische Details BSM180D12P2C101 ROHM Semiconductor
Description: MOSFET 2N-CH 1200V 180A MODULE, Packaging: Bulk, Package / Case: Module, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 1130W, Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 204A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 10V, Vgs(th) (Max) @ Id: 4V @ 35.2mA, Supplier Device Package: Module, Part Status: Active.
Weitere Produktangebote BSM180D12P2C101 nach Preis ab 1104.25 EUR bis 1104.25 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
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BSM180D12P2C101 | Rohm Semiconductor |
 Description: MOSFET 2N-CH 1200V 180A MODULEPackaging: Bulk Package / Case: Module Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1130W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 204A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 10V Vgs(th) (Max) @ Id: 4V @ 35.2mA Supplier Device Package: Module Part Status: Active |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSM180D12P2C101 |
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Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 1200V 180A MODULE
Packaging: Bulk
Package / Case: Module
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1130W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 204A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 10V
Vgs(th) (Max) @ Id: 4V @ 35.2mA
Supplier Device Package: Module
Part Status: Active
Description: MOSFET 2N-CH 1200V 180A MODULE
Packaging: Bulk
Package / Case: Module
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1130W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 204A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 10V
Vgs(th) (Max) @ Id: 4V @ 35.2mA
Supplier Device Package: Module
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 1104.25 EUR |