Produkte > ROCHESTER ELECTRONICS > BSM30GP60B2BOSA1

BSM30GP60B2BOSA1 ROCHESTER ELECTRONICS


Hersteller: ROCHESTER ELECTRONICS
Description: ROCHESTER ELECTRONICS - BSM30GP60B2BOSA1 - BSM30GP60 - IGBT LOW POWER ECONO
euEccn: TBC
hazardous: false
productTraceability: Yes-Date/Lot Code
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 3 Stücke:

Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details BSM30GP60B2BOSA1 ROCHESTER ELECTRONICS

Description: IGBT MODULE 600V 50A 180W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Three Phase Bridge Rectifier, Configuration: Full Bridge, Operating Temperature: -40°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 30A, NTC Thermistor: Yes, Supplier Device Package: Module, Part Status: Obsolete, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 180 W, Current - Collector Cutoff (Max): 500 µA, Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V.

Weitere Produktangebote BSM30GP60B2BOSA1

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
BSM30GP60B2BOSA1 Hersteller : Infineon Technologies Description: IGBT MODULE 600V 50A 180W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 180 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH