BSM35GD120DLCE3224BOSA1 ROCHESTER ELECTRONICS
Hersteller: ROCHESTER ELECTRONICS
Description: ROCHESTER ELECTRONICS - BSM35GD120DLCE3224BOSA1 - BSM35GD120DLC - LOW POWER ECONO
euEccn: TBC
hazardous: false
productTraceability: Yes-Date/Lot Code
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
Produktrezensionen
Produktbewertung abgeben
Technische Details BSM35GD120DLCE3224BOSA1 ROCHESTER ELECTRONICS
Description: IGBT MOD 1200V 70A 280W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge, Operating Temperature: -40°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 35A, NTC Thermistor: No, Supplier Device Package: Module, Current - Collector (Ic) (Max): 70 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 280 W, Current - Collector Cutoff (Max): 80 µA, Input Capacitance (Cies) @ Vce: 2 nF @ 25 V.
Weitere Produktangebote BSM35GD120DLCE3224BOSA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| BSM35GD120DLCE3224BOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 70A 280W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 35A NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 280 W Current - Collector Cutoff (Max): 80 µA Input Capacitance (Cies) @ Vce: 2 nF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| BSM35GD120DLCE3224BOSA1 | Infineon Technologies | High Reliability IGBT Modules IC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BSM35GD120DLCE3224BOSA1 |
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 70A 280W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 35A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 80 µA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Description: IGBT MOD 1200V 70A 280W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 35A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 80 µA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSM35GD120DLCE3224BOSA1 |
Hersteller: Infineon Technologies
High Reliability IGBT Modules IC
High Reliability IGBT Modules IC
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen
Stück im Wert von UAH
