BSM50GD120DLCBPSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 85A AG-ECONO2A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2A
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 84 µA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Description: IGBT MODULE 1200V 85A AG-ECONO2A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2A
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 84 µA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
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Technische Details BSM50GD120DLCBPSA1 Infineon Technologies
Description: IGBT MODULE 1200V 85A AG-ECONO2A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge Inverter, Operating Temperature: 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A, NTC Thermistor: No, Supplier Device Package: AG-ECONO2A, Part Status: Last Time Buy, Current - Collector (Ic) (Max): 85 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 350 W, Current - Collector Cutoff (Max): 84 µA, Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V.
Weitere Produktangebote BSM50GD120DLCBPSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| BSM50GD120DLCBPSA1 | Hersteller : Infineon Technologies | IGBT Modules LOW POWER ECONO |
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