BSM600GA120DLCS ROCHESTER ELECTRONICS
Hersteller: ROCHESTER ELECTRONICSDescription: ROCHESTER ELECTRONICS - BSM600GA120DLCS - BSM600GA120 INSULATED GATE BIPOLAR TRAN
euEccn: TBC
hazardous: false
productTraceability: Yes-Date/Lot Code
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details BSM600GA120DLCS ROCHESTER ELECTRONICS
Description: IGBT MODULE, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -40°C ~ 125°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 600A, NTC Thermistor: No, Supplier Device Package: Module, Part Status: Active, Current - Collector (Ic) (Max): 900 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 3.9 kW, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 44 nF @ 25 V.
Weitere Produktangebote BSM600GA120DLCS
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| BSM600GA120DLCS | Hersteller : EUPEC |
MODULE |
auf Bestellung 139 Stücke: Lieferzeit 21-28 Tag (e) |
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| BSM600GA120DLCS | Hersteller : Infineon Technologies |
Description: IGBT MODULE Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 600A NTC Thermistor: No Supplier Device Package: Module Part Status: Active Current - Collector (Ic) (Max): 900 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 3.9 kW Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 44 nF @ 25 V |
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