BSO200N03
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auf Bestellung 8639 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details BSO200N03
Description: MOSFET 2N-CH 30V 6.6A 8DSO, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Part Status: Obsolete, Supplier Device Package: PG-DSO-8, Vgs(th) (Max) @ Id: 2V @ 13µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V, Rds On (Max) @ Id, Vgs: 20mOhm @ 7.9A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 6.6A, Drain to Source Voltage (Vdss): 30V, Power - Max: 1.4W.
Weitere Produktangebote BSO200N03
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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BSO200N03 | Infineon Technologies |
Description: MOSFET 2N-CH 30V 6.6A 8DSO Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Part Status: Obsolete Supplier Device Package: PG-DSO-8 Vgs(th) (Max) @ Id: 2V @ 13µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V Rds On (Max) @ Id, Vgs: 20mOhm @ 7.9A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 15V Current - Continuous Drain (Id) @ 25°C: 6.6A Drain to Source Voltage (Vdss): 30V Power - Max: 1.4W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
BSO200N03 | Infineon Technologies |
Description: MOSFET 2N-CH 30V 6.6A 8DSO Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Part Status: Obsolete Supplier Device Package: PG-DSO-8 Vgs(th) (Max) @ Id: 2V @ 13µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V Rds On (Max) @ Id, Vgs: 20mOhm @ 7.9A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 15V Current - Continuous Drain (Id) @ 25°C: 6.6A Drain to Source Voltage (Vdss): 30V Power - Max: 1.4W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
BSO200N03 | Infineon Technologies |
MOSFET N-Ch 30V 7A DSO-8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BSO200N03 |
|
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 6.6A 8DSO
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 13µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6.6A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.4W
Description: MOSFET 2N-CH 30V 6.6A 8DSO
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 13µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6.6A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.4W
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSO200N03 |
|
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 6.6A 8DSO
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Obsolete
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 13µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6.6A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.4W
Description: MOSFET 2N-CH 30V 6.6A 8DSO
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Obsolete
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 13µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6.6A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.4W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSO200N03 |
|
Hersteller: Infineon Technologies
MOSFET N-Ch 30V 7A DSO-8
MOSFET N-Ch 30V 7A DSO-8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH