BSO203SP Infineon Technologies

Description: P-CHANNEL POWER MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Active, Supplier Device Package: PG-DSO-8, Vgs(th) (Max) @ Id: 1.2V @ 50µA, Power Dissipation (Max): 1.6W (Ta), Rds On (Max) @ Id, Vgs: 21mOhm @ 8.9A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Bulk.