BSO211P Infineon Technologies

Description: MOSFET 2P-CH 20V 4.7A 8DSO, Part Status: Active, Supplier Device Package: PG-DSO-8, Vgs(th) (Max) @ Id: 1.2V @ 25µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 23.9nC @ 4.5V, Rds On (Max) @ Id, Vgs: 67mOhm @ 4.7A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 4.7A, Drain to Source Voltage (Vdss): 20V, Power - Max: 2W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Bulk.