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BSO220N03MDGXUMA1

BSO220N03MDGXUMA1 Infineon Technologies

BSO220N03MD_rev1.1.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a30431b0626df011b0d922ec17e5c
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 6A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+0.46 EUR
5000+0.42 EUR
7500+0.41 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details BSO220N03MDGXUMA1 Infineon Technologies

Description: MOSFET 2N-CH 30V 6A 8DSO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.4W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6A, Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V, Rds On (Max) @ Id, Vgs: 22mOhm @ 7.7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: PG-DSO-8, Part Status: Active.

Weitere Produktangebote BSO220N03MDGXUMA1 nach Preis ab 0.4 EUR bis 2.01 EUR

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BSO220N03MDGXUMA1 BSO220N03MDGXUMA1 INFINEON TECHNOLOGIES BSO220N03MDG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; 1.56W; PG-DSO-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.7A
Power dissipation: 1.56W
Case: PG-DSO-8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 2440 Stücke:
Lieferzeit 14-21 Tag (e)
57+1.27 EUR
74+0.97 EUR
90+0.8 EUR
118+0.61 EUR
143+0.5 EUR
168+0.43 EUR
250+0.4 EUR
Mindestbestellmenge: 57 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSO220N03MDGXUMA1 BSO220N03MDGXUMA1 Infineon Technologies BSO220N03MD_rev1.1.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a30431b0626df011b0d922ec17e5c Description: MOSFET 2N-CH 30V 6A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
auf Bestellung 8052 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.78 EUR
16+1.12 EUR
100+0.73 EUR
500+0.57 EUR
1000+0.52 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSO220N03MDGXUMA1 BSO220N03MDGXUMA1 Infineon Technologies BSO220N03MD_rev1.1.pdf MOSFETs N-Ch 30V 7.7A DSO-8 OptiMOS 3M
auf Bestellung 61672 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.01 EUR
10+1.02 EUR
100+0.73 EUR
500+0.6 EUR
1000+0.55 EUR
2500+0.47 EUR
5000+0.44 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSO220N03MDGXUMA1 BSO220N03MDG-DTE.pdf
BSO220N03MDGXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; 1.56W; PG-DSO-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.7A
Power dissipation: 1.56W
Case: PG-DSO-8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 2440 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
57+1.27 EUR
74+0.97 EUR
90+0.8 EUR
118+0.61 EUR
143+0.5 EUR
168+0.43 EUR
250+0.4 EUR
Mindestbestellmenge: 57 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSO220N03MDGXUMA1 BSO220N03MD_rev1.1.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a30431b0626df011b0d922ec17e5c
BSO220N03MDGXUMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 6A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
auf Bestellung 8052 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10+1.78 EUR
16+1.12 EUR
100+0.73 EUR
500+0.57 EUR
1000+0.52 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSO220N03MDGXUMA1 BSO220N03MD_rev1.1.pdf
BSO220N03MDGXUMA1
Hersteller: Infineon Technologies
MOSFETs N-Ch 30V 7.7A DSO-8 OptiMOS 3M
auf Bestellung 61672 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+2.01 EUR
10+1.02 EUR
100+0.73 EUR
500+0.6 EUR
1000+0.55 EUR
2500+0.47 EUR
5000+0.44 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH