Technische Details BSO330N02K G Infineon Technologies
Description: N-CHANNEL POWER MOSFET, Part Status: Active, Supplier Device Package: PG-DSO-8, Vgs(th) (Max) @ Id: 1.2V @ 20µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 4.5V, Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 5.4A, Drain to Source Voltage (Vdss): 20V, Power - Max: 1.4W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Bulk.
Weitere Produktangebote BSO330N02K G nach Preis ab 0.44 EUR bis 0.44 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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|---|---|---|---|---|---|---|---|
| BSO330N02KG | Infineon Technologies |
 Description: N-CHANNEL POWER MOSFETPart Status: Active Supplier Device Package: PG-DSO-8 Vgs(th) (Max) @ Id: 1.2V @ 20µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 4.5V Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 10V Current - Continuous Drain (Id) @ 25°C: 5.4A Drain to Source Voltage (Vdss): 20V Power - Max: 1.4W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Bulk |
auf Bestellung 1422 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSO330N02KG |
|
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Part Status: Active
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 1.2V @ 20µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Description: N-CHANNEL POWER MOSFET
Part Status: Active
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 1.2V @ 20µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
auf Bestellung 1422 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1422+ | 0.44 EUR |