BSO613SPVGHUMA1 Infineon Technologies

Description: MOSFET P-CH 60V 3.44A 8DSO, Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-DSO-8, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 2.5W (Ta), Rds On (Max) @ Id, Vgs: 130mOhm @ 3.44A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.44A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).