
BSO615CGXUMA1 Infineon Technologies

Description: MOSFET N/P-CH 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V, 460pF @ 25V
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.1A, 10V, 300mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V, 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 20µA, 2V @ 450µA
Supplier Device Package: PG-DSO-8
Part Status: Last Time Buy
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
2500+ | 0.89 EUR |
5000+ | 0.84 EUR |
12500+ | 0.81 EUR |
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Technische Details BSO615CGXUMA1 Infineon Technologies
Description: MOSFET N/P-CH 8-SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 2A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V, 460pF @ 25V, Rds On (Max) @ Id, Vgs: 110mOhm @ 3.1A, 10V, 300mOhm @ 2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V, 20nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 20µA, 2V @ 450µA, Supplier Device Package: PG-DSO-8, Part Status: Last Time Buy.
Weitere Produktangebote BSO615CGXUMA1 nach Preis ab 0.45 EUR bis 2.09 EUR
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BSO615CGXUMA1 | Hersteller : Infineon Technologies |
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auf Bestellung 5373 Stücke: Lieferzeit 10-14 Tag (e) |
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BSO615CGXUMA1 | Hersteller : Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V, 460pF @ 25V Rds On (Max) @ Id, Vgs: 110mOhm @ 3.1A, 10V, 300mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V, 20nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 20µA, 2V @ 450µA Supplier Device Package: PG-DSO-8 Part Status: Last Time Buy |
auf Bestellung 17704 Stücke: Lieferzeit 10-14 Tag (e) |
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BSO615CGXUMA1 | Hersteller : Infineon Technologies |
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auf Bestellung 2510 Stücke: Lieferzeit 14-21 Tag (e) |
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BSO615CGXUMA1 | Hersteller : Infineon Technologies |
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auf Bestellung 2510 Stücke: Lieferzeit 14-21 Tag (e) |
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BSO615CGXUMA1 | Hersteller : Infineon Technologies |
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auf Bestellung 3107 Stücke: Lieferzeit 14-21 Tag (e) |
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BSO615CGXUMA1 | Hersteller : Infineon |
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auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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BSO615CGXUMA1 | Hersteller : Infineon Technologies |
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Produkt ist nicht verfügbar |
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BSO615CGXUMA1 | Hersteller : Infineon Technologies |
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Produkt ist nicht verfügbar |