Technische Details BSO615N INFINEON
Description: MOSFET 2N-CH 60V 2.6A 8DSO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 2.6A, Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V, Rds On (Max) @ Id, Vgs: 150mOhm @ 2.6A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 20µA, Supplier Device Package: PG-DSO-8.
Weitere Produktangebote BSO615N
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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BSO615N | Infineon Technologies |
 Description: MOSFET 2N-CH 60V 2.6A 8DSOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.6A Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V Rds On (Max) @ Id, Vgs: 150mOhm @ 2.6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 20µA Supplier Device Package: PG-DSO-8 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
BSO615N | Infineon Technologies |
MOSFETs N-KANAL POWER MOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BSO615N |
|
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 60V 2.6A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-DSO-8
Description: MOSFET 2N-CH 60V 2.6A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-DSO-8
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSO615N |
|
Hersteller: Infineon Technologies
MOSFETs N-KANAL POWER MOS
MOSFETs N-KANAL POWER MOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH