Weitere Produktangebote BSO615NGHUMA1
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BSO615NGHUMA1 | Hersteller : Infineon Technologies |
 Description: MOSFET 2N-CH 60V 2.6A 8DSOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.6A Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V Rds On (Max) @ Id, Vgs: 150mOhm @ 2.6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 20µA Supplier Device Package: PG-DSO-8 |
Produkt ist nicht verfügbar |
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BSO615NGHUMA1 | Hersteller : Infineon Technologies |
MOSFET N-Ch 60V 2.6A SO-8 |
Produkt ist nicht verfügbar |