BSP125 E6327 Infineon Technologies

Description: MOSFET N-CH 600V 120MA SOT223-4, Grade: Automotive, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: PG-SOT223-4, Vgs(th) (Max) @ Id: 2.3V @ 94µA, Power Dissipation (Max): 1.8W (Ta), Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V, Current - Continuous Drain (Id) @ 25°C: 120mA (Ta), FET Type: N-Channel, Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).