BSP126/S911115 NXP
Hersteller: NXPDescription: NXP - BSP126/S911115 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 204767 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details BSP126/S911115 NXP
Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 375mA, Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: SC-73, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V.
Weitere Produktangebote BSP126/S911115
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BSP126/S911115 | Hersteller : NXP USA Inc. |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 375mA Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SC-73 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V |
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