BSP129H6906XTSA1 Infineon Technologies
auf Bestellung 35428 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 264+ | 0.59 EUR |
| 267+ | 0.57 EUR |
| 269+ | 0.54 EUR |
| 270+ | 0.52 EUR |
| 500+ | 0.5 EUR |
| 1000+ | 0.48 EUR |
| 3000+ | 0.45 EUR |
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Technische Details BSP129H6906XTSA1 Infineon Technologies
Description: MOSFET N-CH 240V 350MA SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 350mA (Ta), Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V, FET Feature: Depletion Mode, Power Dissipation (Max): 1.8W (Ta), Vgs(th) (Max) @ Id: 1V @ 108µA, Supplier Device Package: PG-SOT223-4, Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 0V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 240 V, Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 108 pF @ 25 V.
Weitere Produktangebote BSP129H6906XTSA1 nach Preis ab 0.45 EUR bis 2.35 EUR
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BSP129H6906XTSA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 240V 0.35A Automotive 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 35428 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP129H6906XTSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223 Mounting: SMD Type of transistor: N-MOSFET Power dissipation: 1.8W Polarisation: unipolar Technology: SIPMOS™ Kind of channel: depleted Gate-source voltage: ±20V Case: SOT223 Drain-source voltage: 240V Drain current: 0.35A On-state resistance: 6Ω Anzahl je Verpackung: 1 Stücke |
auf Bestellung 109 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP129H6906XTSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223 Mounting: SMD Type of transistor: N-MOSFET Power dissipation: 1.8W Polarisation: unipolar Technology: SIPMOS™ Kind of channel: depleted Gate-source voltage: ±20V Case: SOT223 Drain-source voltage: 240V Drain current: 0.35A On-state resistance: 6Ω |
auf Bestellung 109 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP129H6906XTSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 240V 0.35A Automotive 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP129H6906XTSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 240V 0.35A Automotive 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP129H6906XTSA1 | Hersteller : Infineon Technologies |
MOSFET N-Ch 240V 350mA SOT-223-3 |
auf Bestellung 28 Stücke: Lieferzeit 14-28 Tag (e) |
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BSP129H6906XTSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 240V 0.35A Automotive 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP129H6906XTSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 240V 0.35A Automotive 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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BSP129H6906XTSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 240V 350MA SOT223-4 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V FET Feature: Depletion Mode Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 1V @ 108µA Supplier Device Package: PG-SOT223-4 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 240 V Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 108 pF @ 25 V |
Produkt ist nicht verfügbar |
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BSP129H6906XTSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 240V 350MA SOT223-4 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V FET Feature: Depletion Mode Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 1V @ 108µA Supplier Device Package: PG-SOT223-4 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 240 V Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 108 pF @ 25 V |
Produkt ist nicht verfügbar |