BSP135H6906XTSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 600V 120MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 94µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 13000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 0.98 EUR |
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Technische Details BSP135H6906XTSA1 Infineon Technologies
Description: MOSFET N-CH 600V 120MA SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Depletion Mode, Current - Continuous Drain (Id) @ 25°C: 120mA (Ta), Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V, Power Dissipation (Max): 1.8W (Ta), Vgs(th) (Max) @ Id: 1V @ 94µA, Supplier Device Package: PG-SOT223-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 0V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BSP135H6906XTSA1 nach Preis ab 1.02 EUR bis 3.52 EUR
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auf Bestellung 581 Stücke: Lieferzeit 10-14 Tag (e) |
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BSP135H6906XTSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 120MA SOT223-4 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 120mA (Ta) Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 1V @ 94µA Supplier Device Package: PG-SOT223-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 13414 Stücke: Lieferzeit 10-14 Tag (e) |
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BSP135H6906XTSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 0.12A Automotive 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 11000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP135H6906XTSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 0.12A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101 |
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BSP135H6906XTSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 0.12A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101 |
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