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BSP135H6906XTSA1

BSP135H6906XTSA1 Infineon Technologies

Infineon-BSP135-DS-v01_33-en.pdf?fileId=db3a30433c1a8752013c1fd4c839399b
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 120MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 94µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1000+1.2 EUR
2000+1.12 EUR
3000+1.07 EUR
5000+1.02 EUR
7000+0.99 EUR
10000+0.97 EUR
Mindestbestellmenge: 1000 Stücke
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Technische Details BSP135H6906XTSA1 Infineon Technologies

Description: MOSFET N-CH 600V 120MA SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Depletion Mode, Current - Continuous Drain (Id) @ 25°C: 120mA (Ta), Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V, Power Dissipation (Max): 1.8W (Ta), Vgs(th) (Max) @ Id: 1V @ 94µA, Supplier Device Package: PG-SOT223-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 0V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote BSP135H6906XTSA1 nach Preis ab 0.99 EUR bis 4.21 EUR

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BSP135H6906XTSA1 BSP135H6906XTSA1 Infineon Technologies Infineon-BSP135-DS-v01_33-en.pdf?fileId=db3a30433c1a8752013c1fd4c839399b Description: MOSFET N-CH 600V 120MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 94µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 12934 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.73 EUR
10+2.4 EUR
100+1.64 EUR
500+1.31 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSP135H6906XTSA1 BSP135H6906XTSA1 Infineon Technologies Infineon_BSP135_DS_v01_33_en.pdf MOSFETs N-Ch 600V 20mA SOT-223-3
auf Bestellung 7720 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.21 EUR
10+2.69 EUR
100+1.83 EUR
500+1.56 EUR
1000+1.38 EUR
2000+1.31 EUR
5000+1.24 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BSP135H6906XTSA1 INFINEON TECHNOLOGIES Infineon-BSP135-DS-v01_33-en.pdf?fileId=db3a30433c1a8752013c1fd4c839399b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 120mA; Idm: 0.12A; 1.8W; SOT223
Type of transistor: N-MOSFET
Case: SOT223
Mounting: SMD
Drain-source voltage: 600V
Drain current: 0.12A
Gate charge: 4.9nC
Pulsed drain current: 0.12A
On-state resistance: 25Ω
Power dissipation: 1.8W
Gate-source voltage: 20V
Application: automotive industry
Technology: MOSFET
auf Bestellung 11000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.99 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSP135H6906XTSA1 Infineon-BSP135-DS-v01_33-en.pdf?fileId=db3a30433c1a8752013c1fd4c839399b
BSP135H6906XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 120MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 94µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 12934 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+3.73 EUR
10+2.4 EUR
100+1.64 EUR
500+1.31 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSP135H6906XTSA1 Infineon_BSP135_DS_v01_33_en.pdf
BSP135H6906XTSA1
Hersteller: Infineon Technologies
MOSFETs N-Ch 600V 20mA SOT-223-3
auf Bestellung 7720 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+4.21 EUR
10+2.69 EUR
100+1.83 EUR
500+1.56 EUR
1000+1.38 EUR
2000+1.31 EUR
5000+1.24 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BSP135H6906XTSA1 Infineon-BSP135-DS-v01_33-en.pdf?fileId=db3a30433c1a8752013c1fd4c839399b
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 120mA; Idm: 0.12A; 1.8W; SOT223
Type of transistor: N-MOSFET
Case: SOT223
Mounting: SMD
Drain-source voltage: 600V
Drain current: 0.12A
Gate charge: 4.9nC
Pulsed drain current: 0.12A
On-state resistance: 25Ω
Power dissipation: 1.8W
Gate-source voltage: 20V
Application: automotive industry
Technology: MOSFET
auf Bestellung 11000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
1000+0.99 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH