BSP170P UMW
Hersteller: UMW
Description: MOSFET P-CH 60V 1.9A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.18 EUR |
| 16+ | 1.36 EUR |
| 50+ | 1 EUR |
| 100+ | 0.89 EUR |
| 500+ | 0.69 EUR |
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Technische Details BSP170P UMW
Description: MOSFET P-CH 60V 1.9A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 155°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), Rds On (Max) @ Id, Vgs: 300mOhm @ 1.9A, 10V, Power Dissipation (Max): 1.8W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-223-4, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V.
Weitere Produktangebote BSP170P
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| BSP170P | INF |
09+ |
auf Bestellung 5018 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| BSP170P |
|
Hersteller: INF
09+
09+
auf Bestellung 5018 Stücke:
Lieferzeit 21-28 Tag (e)