BSP220,115 NEXPERIA
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -220V; -0.225A; 1.5W; SC73,SOT223
Case: SC73; SOT223
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -220V
Drain current: -0.225A
Power dissipation: 1.5W
On-state resistance: 12Ω
Gate-source voltage: ±20V
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Technische Details BSP220,115 NEXPERIA
Description: MOSFET P-CH 200V 225MA SOT223, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: SOT-223, Vgs(th) (Max) @ Id: 2.8V @ 1mA, Power Dissipation (Max): 1.5W (Ta), Rds On (Max) @ Id, Vgs: 12Ohm @ 200mA, 10V, Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 25 V, Drain to Source Voltage (Vdss): 200 V, Current - Continuous Drain (Id) @ 25°C: 225mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).
Weitere Produktangebote BSP220,115 nach Preis ab 0.79 EUR bis 1.92 EUR
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BSP220,115 | Nexperia USA Inc. |
Description: MOSFET P-CH 200V 225MA SOT223 Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 25 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: SOT-223 Vgs(th) (Max) @ Id: 2.8V @ 1mA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 12Ohm @ 200mA, 10V Current - Continuous Drain (Id) @ 25°C: 225mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) |
auf Bestellung 124 Stücke: Lieferzeit 10-14 Tag (e) |
|
| BSP220,115 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 200V 225MA SOT223
Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 225mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 200V 225MA SOT223
Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 225mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
auf Bestellung 124 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 1.92 EUR |
| 15+ | 1.2 EUR |
| 100+ | 0.79 EUR |