Produkte > NEXPERIA > BSP225,115

BSP225,115 Nexperia


bsp225.pdf
Hersteller: Nexperia
Trans MOSFET P-CH 250V 0.225A 4-Pin(3+Tab) SC-73 T/R
auf Bestellung 245 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
96+1.53 EUR
153+0.94 EUR
Mindestbestellmenge: 96 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details BSP225,115 Nexperia

Description: MOSFET P-CH 250V 225MA SOT223, Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 25 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: SOT-223, Vgs(th) (Max) @ Id: 2.8V @ 1mA, Power Dissipation (Max): 1.5W (Ta), Rds On (Max) @ Id, Vgs: 15Ohm @ 200mA, 10V, Current - Continuous Drain (Id) @ 25°C: 225mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).

Weitere Produktangebote BSP225,115 nach Preis ab 0.63 EUR bis 2.75 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
BSP225,115 BSP225,115 Nexperia USA Inc. BSP225_CNV.pdf Description: MOSFET P-CH 250V 225MA SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 225mA (Ta)
Rds On (Max) @ Id, Vgs: 15Ohm @ 200mA, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SOT-223
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 25 V
auf Bestellung 368 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.55 EUR
19+0.97 EUR
100+0.63 EUR
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSP225,115 BSP225,115 NEXPERIA BSP225.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.225A; 1.5W; SC73,SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -0.225A
Power dissipation: 1.5W
Case: SC73; SOT223
Gate-source voltage: ±20V
On-state resistance: 15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.75 EUR
Mindestbestellmenge: 26 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSP225,115 BSP225_CNV.pdf
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 250V 225MA SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 225mA (Ta)
Rds On (Max) @ Id, Vgs: 15Ohm @ 200mA, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SOT-223
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 25 V
auf Bestellung 368 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
12+1.55 EUR
19+0.97 EUR
100+0.63 EUR
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSP225,115 BSP225.pdf
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.225A; 1.5W; SC73,SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -0.225A
Power dissipation: 1.5W
Case: SC73; SOT223
Gate-source voltage: ±20V
On-state resistance: 15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
26+2.75 EUR
Mindestbestellmenge: 26 Stücke
Im Einkaufswagen  Stück im Wert von  UAH