| Anzahl | Preis |
|---|---|
| 4+ | 0.87 EUR |
| 10+ | 0.74 EUR |
| 100+ | 0.54 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.36 EUR |
| 8000+ | 0.32 EUR |
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Technische Details BSP230,135 Nexperia
Description: MOSFET P-CH 300V 210MA SOT223, Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 25 V, Drain to Source Voltage (Vdss): 300 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: SOT-223, Vgs(th) (Max) @ Id: 2.55V @ 1mA, Power Dissipation (Max): 1.5W (Ta), Rds On (Max) @ Id, Vgs: 17Ohm @ 170mA, 10V, Current - Continuous Drain (Id) @ 25°C: 210mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).
Weitere Produktangebote BSP230,135
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| BSP230,135 | NXP |
 MOSFET P-CH 300V 210MA SOT223 Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
BSP230,135 | Nexperia USA Inc. |
Description: MOSFET P-CH 300V 210MA SOT223 Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 25 V Drain to Source Voltage (Vdss): 300 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: SOT-223 Vgs(th) (Max) @ Id: 2.55V @ 1mA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 17Ohm @ 170mA, 10V Current - Continuous Drain (Id) @ 25°C: 210mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
BSP230,135 | Nexperia USA Inc. |
Description: MOSFET P-CH 300V 210MA SOT223 Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 25 V Drain to Source Voltage (Vdss): 300 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: SOT-223 Vgs(th) (Max) @ Id: 2.55V @ 1mA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 17Ohm @ 170mA, 10V Current - Continuous Drain (Id) @ 25°C: 210mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BSP230,135 |
|
Hersteller: NXP
MOSFET P-CH 300V 210MA SOT223 Транзистори
MOSFET P-CH 300V 210MA SOT223 Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSP230,135 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 300V 210MA SOT223
Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 25 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2.55V @ 1mA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 17Ohm @ 170mA, 10V
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 300V 210MA SOT223
Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 25 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2.55V @ 1mA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 17Ohm @ 170mA, 10V
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSP230,135 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 300V 210MA SOT223
Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 25 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2.55V @ 1mA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 17Ohm @ 170mA, 10V
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 300V 210MA SOT223
Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 25 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2.55V @ 1mA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 17Ohm @ 170mA, 10V
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH