BSP296L6433HTMA1 Infineon Technologies
Hersteller: Infineon TechnologiesTrans MOSFET N-CH 100V 1.1A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101
auf Bestellung 4081 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1124+ | 0.49 EUR |
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Technische Details BSP296L6433HTMA1 Infineon Technologies
Description: MOSFET N-CH 100V 1.1A SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), Rds On (Max) @ Id, Vgs: 700mOhm @ 1.1A, 10V, Power Dissipation (Max): 1.79W (Ta), Vgs(th) (Max) @ Id: 1.8V @ 400µA, Supplier Device Package: PG-SOT223-4, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 25 V, Qualification: AEC-Q101.
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BSP296L6433HTMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 1.1A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101 |
auf Bestellung 2675 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP296L6433HTMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 1.1A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101 |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP296L6433HTMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 1.1A Automotive 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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BSP296L6433HTMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 1.1A SOT223-4 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Rds On (Max) @ Id, Vgs: 700mOhm @ 1.1A, 10V Power Dissipation (Max): 1.79W (Ta) Vgs(th) (Max) @ Id: 1.8V @ 400µA Supplier Device Package: PG-SOT223-4 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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BSP296L6433HTMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 1.1A SOT223-4 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Rds On (Max) @ Id, Vgs: 700mOhm @ 1.1A, 10V Power Dissipation (Max): 1.79W (Ta) Vgs(th) (Max) @ Id: 1.8V @ 400µA Supplier Device Package: PG-SOT223-4 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |