Technische Details BSP315 INF
Description: MOSFET P-CH 50V 1A SOT223, Packaging: Bulk, Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1A, Power Dissipation (Max): 1.8W, Supplier Device Package: SOT-223, Drain to Source Voltage (Vdss): 50 V.
Weitere Produktangebote BSP315
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
BSP315 | Hersteller : Siemens |
 Description: MOSFET P-CH 50V 1A SOT223Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1A Power Dissipation (Max): 1.8W Supplier Device Package: SOT-223 Drain to Source Voltage (Vdss): 50 V |
Produkt ist nicht verfügbar |