Technische Details BSP315PE6327 Infineon
Description: MOSFET P-CH 60V 1.17A SOT223-4, Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PG-SOT223-4, Vgs(th) (Max) @ Id: 2V @ 160µA, Power Dissipation (Max): 1.8W (Ta), Rds On (Max) @ Id, Vgs: 800mOhm @ 1.17A, 10V, Current - Continuous Drain (Id) @ 25°C: 1.17A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 155°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote BSP315PE6327
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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BSP315P-E6327 | Infineon Technologies |
 Description: MOSFET P-CH 60V 1.17A SOT223-4Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-SOT223-4 Vgs(th) (Max) @ Id: 2V @ 160µA Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 800mOhm @ 1.17A, 10V Current - Continuous Drain (Id) @ 25°C: 1.17A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 155°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
BSP315P E6327 | Infineon Technologies |
MOSFET P-KANAL |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BSP315P-E6327 |
|
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 1.17A SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 2V @ 160µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.17A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.17A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET P-CH 60V 1.17A SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 2V @ 160µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.17A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.17A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSP315P E6327 |
|
Hersteller: Infineon Technologies
MOSFET P-KANAL
MOSFET P-KANAL
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH