BSP320SL6327 Infineon Technologies

Description: SMALL-SIGNAL N-CHANNEL MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-SOT223-4-21, Vgs(th) (Max) @ Id: 4V @ 20µA, Power Dissipation (Max): 1.8W (Ta), Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.9A (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Bulk.