BSP320SH6327XTSA1 Infineon Technologies
Hersteller: Infineon Technologies
Trans MOSFET N-CH 60V 2.9A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101
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Technische Details BSP320SH6327XTSA1 Infineon Technologies
Description: MOSFET N-CH 60V 2.9A SOT223-4, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Last Time Buy, Supplier Device Package: PG-SOT223-4, Vgs(th) (Max) @ Id: 4V @ 20µA, Power Dissipation (Max): 1.8W (Ta), Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.9A (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).
Weitere Produktangebote BSP320SH6327XTSA1 nach Preis ab 0.42 EUR bis 1.83 EUR
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BSP320SH6327XTSA1 | Infineon Technologies |
Trans MOSFET N-CH 60V 2.9A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101 |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP320SH6327XTSA1 | Infineon Technologies |
Trans MOSFET N-CH 60V 2.9A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101 |
auf Bestellung 16000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP320SH6327XTSA1 | Infineon Technologies |
MOSFETs N-Ch 60V 2.9A SOT-223-3 |
auf Bestellung 15501 Stücke: Lieferzeit 10-14 Tag (e) |
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BSP320SH6327XTSA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 2.9A SOT223-4 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Tj) Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: PG-SOT223-4 Grade: Automotive Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 582 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSP320SH6327XTSA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 60V 2.9A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101
Trans MOSFET N-CH 60V 2.9A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 994+ | 0.55 EUR |
| 1078+ | 0.5 EUR |
| BSP320SH6327XTSA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 60V 2.9A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101
Trans MOSFET N-CH 60V 2.9A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101
auf Bestellung 16000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 994+ | 0.55 EUR |
| 1078+ | 0.5 EUR |
| 10000+ | 0.44 EUR |
| BSP320SH6327XTSA1 |
|
Hersteller: Infineon Technologies
MOSFETs N-Ch 60V 2.9A SOT-223-3
MOSFETs N-Ch 60V 2.9A SOT-223-3
auf Bestellung 15501 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.23 EUR |
| 10+ | 0.92 EUR |
| 100+ | 0.69 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.42 EUR |
| BSP320SH6327XTSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 2.9A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tj)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 2.9A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tj)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 582 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 1.83 EUR |
| 16+ | 1.15 EUR |
| 100+ | 0.75 EUR |
| 500+ | 0.59 EUR |