
BSP320S L6433 Infineon Technologies

Trans MOSFET N-CH 60V 2.9A Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R
auf Bestellung 2441 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
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1694+ | 0.33 EUR |
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Technische Details BSP320S L6433 Infineon Technologies
Description: SMALL-SIGNAL N-CHANNEL MOSFET, Packaging: Bulk, Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.9A (Tj), Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V, Power Dissipation (Max): 1.8W (Ta), Vgs(th) (Max) @ Id: 4V @ 20µA, Supplier Device Package: PG-SOT223-4-21, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote BSP320S L6433 nach Preis ab 0.36 EUR bis 0.36 EUR
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BSP320SL6433 | Hersteller : Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Tj) Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: PG-SOT223-4-21 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 6378 Stücke: Lieferzeit 10-14 Tag (e) |
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BSP320S L6433 | Hersteller : Infineon Technologies |
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BSP320S L6433 | Hersteller : Infineon Technologies |
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Produkt ist nicht verfügbar |