BSP52E6327HTSA1 ROCHESTER ELECTRONICS
Hersteller: ROCHESTER ELECTRONICS
Description: ROCHESTER ELECTRONICS - BSP52E6327HTSA1 - BSP52 - BIPOLAR DIGITAL TRANSISTOR
tariffCode: 85412100
euEccn: TBC
hazardous: false
productTraceability: No
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
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Technische Details BSP52E6327HTSA1 ROCHESTER ELECTRONICS
Description: TRANS NPN DARL 80V 1A SOT223-4, Power - Max: 1.5 W, Voltage - Collector Emitter Breakdown (Max): 80 V, Current - Collector (Ic) (Max): 1 A, Part Status: Active, Supplier Device Package: PG-SOT223-4, Frequency - Transition: 200MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V, Current - Collector Cutoff (Max): 10µA, Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A, Operating Temperature: 150°C (TJ), Transistor Type: NPN - Darlington, Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Bulk.
Weitere Produktangebote BSP52E6327HTSA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| BSP52E6327HTSA1 | Infineon Technologies |
Description: TRANS NPN DARL 80V 1A SOT223-4 Power - Max: 1.5 W Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: PG-SOT223-4 Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Current - Collector Cutoff (Max): 10µA Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BSP52E6327HTSA1 |
|
Hersteller: Infineon Technologies
Description: TRANS NPN DARL 80V 1A SOT223-4
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: PG-SOT223-4
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
Description: TRANS NPN DARL 80V 1A SOT223-4
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: PG-SOT223-4
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH