BSP603S2LNT Infineon Technologies

Description: N-CHANNEL POWER MOSFET, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PG-SOT223-4-21, Vgs(th) (Max) @ Id: 2V @ 50µA, Power Dissipation (Max): 1.8W (Ta), Rds On (Max) @ Id, Vgs: 33mOhm @ 2.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Bulk.