BSP613PH6327XTSA1
Produktcode: 135503
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Weitere Produktangebote BSP613PH6327XTSA1 nach Preis ab 0.67 EUR bis 4.57 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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BSP613PH6327XTSA1 | Infineon Technologies |
Trans MOSFET P-CH 60V 2.9A Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 19000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP613PH6327XTSA1 | Infineon Technologies |
Description: MOSFET P-CH 60V 2.9A SOT223-4Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 2.9A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: PG-SOT223-4 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSP613PH6327XTSA1 | Infineon Technologies |
Trans MOSFET P-CH 60V 2.9A Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 4139 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP613PH6327XTSA1 | Infineon Technologies |
Trans MOSFET P-CH 60V 2.9A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101 |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP613PH6327XTSA1 | Infineon Technologies |
Trans MOSFET P-CH 60V 2.9A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101 |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP613PH6327XTSA1 | Infineon Technologies |
Trans MOSFET P-CH 60V 2.9A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101 |
auf Bestellung 600 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP613PH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -2.9A; 1.8W; PG-SOT223 Mounting: SMD Power dissipation: 1.8W Polarisation: unipolar Technology: SIPMOS™ Drain current: -2.9A Kind of channel: enhancement Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±20V Case: PG-SOT223 On-state resistance: 0.13Ω |
auf Bestellung 120 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP613PH6327XTSA1 | Infineon Technologies |
Trans MOSFET P-CH 60V 2.9A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101 |
auf Bestellung 3836 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP613PH6327XTSA1 | Infineon Technologies |
Description: MOSFET P-CH 60V 2.9A SOT223-4FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-SOT223-4 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 2.9A, 10V Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 6030 Stücke: Lieferzeit 10-14 Tag (e) |
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BSP613PH6327XTSA1 | Infineon Technologies |
MOSFETs P-Ch -60V -2.9A SOT-223-3 |
auf Bestellung 4759 Stücke: Lieferzeit 10-14 Tag (e) |
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BSP613PH6327XTSA1 | INFINEON |
Description: INFINEON - BSP613PH6327XTSA1 - Leistungs-MOSFET, p-Kanal, 60 V, 2.9 A, 0.13 ohm, SOT-223, OberflächenmontagetariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 2.9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 1.8W Bauform - Transistor: SOT-223 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.13ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 14272 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP613PH6327XTSA1 | Infineon Technologies |
Trans MOSFET P-CH 60V 2.9A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101 |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| BSP613PH6327XTSA1 |
![]() |
Hersteller: Infineon Technologies
Trans MOSFET P-CH 60V 2.9A Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R
Trans MOSFET P-CH 60V 2.9A Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R
auf Bestellung 19000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 0.81 EUR |
| 2000+ | 0.67 EUR |
| BSP613PH6327XTSA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 2.9A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.9A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 60V 2.9A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.9A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 0.88 EUR |
| 2000+ | 0.86 EUR |
| 3000+ | 0.82 EUR |
| 5000+ | 0.8 EUR |
| BSP613PH6327XTSA1 |
![]() |
Hersteller: Infineon Technologies
Trans MOSFET P-CH 60V 2.9A Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R
Trans MOSFET P-CH 60V 2.9A Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R
auf Bestellung 4139 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 176+ | 0.99 EUR |
| BSP613PH6327XTSA1 |
![]() |
Hersteller: Infineon Technologies
Trans MOSFET P-CH 60V 2.9A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101
Trans MOSFET P-CH 60V 2.9A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 1 EUR |
| 2000+ | 0.84 EUR |
| 5000+ | 0.75 EUR |
| BSP613PH6327XTSA1 |
![]() |
Hersteller: Infineon Technologies
Trans MOSFET P-CH 60V 2.9A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101
Trans MOSFET P-CH 60V 2.9A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 1.01 EUR |
| 2000+ | 0.87 EUR |
| 5000+ | 0.79 EUR |
| BSP613PH6327XTSA1 |
![]() |
Hersteller: Infineon Technologies
Trans MOSFET P-CH 60V 2.9A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101
Trans MOSFET P-CH 60V 2.9A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101
auf Bestellung 600 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 125+ | 1.39 EUR |
| 147+ | 1.14 EUR |
| 176+ | 0.92 EUR |
| 500+ | 0.77 EUR |
| BSP613PH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.9A; 1.8W; PG-SOT223
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: -2.9A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: PG-SOT223
On-state resistance: 0.13Ω
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.9A; 1.8W; PG-SOT223
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: -2.9A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: PG-SOT223
On-state resistance: 0.13Ω
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 40+ | 2.17 EUR |
| 60+ | 1.43 EUR |
| 71+ | 1.21 EUR |
| 100+ | 0.98 EUR |
| BSP613PH6327XTSA1 |
![]() |
Hersteller: Infineon Technologies
Trans MOSFET P-CH 60V 2.9A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101
Trans MOSFET P-CH 60V 2.9A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101
auf Bestellung 3836 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 61+ | 2.87 EUR |
| 91+ | 1.9 EUR |
| 130+ | 1.3 EUR |
| 500+ | 1.01 EUR |
| 1000+ | 0.9 EUR |
| 2000+ | 0.84 EUR |
| BSP613PH6327XTSA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 2.9A SOT223-4
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET P-CH 60V 2.9A SOT223-4
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 6030 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.03 EUR |
| 14+ | 1.51 EUR |
| 100+ | 1.15 EUR |
| 500+ | 1 EUR |
| BSP613PH6327XTSA1 |
![]() |
Hersteller: Infineon Technologies
MOSFETs P-Ch -60V -2.9A SOT-223-3
MOSFETs P-Ch -60V -2.9A SOT-223-3
auf Bestellung 4759 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.44 EUR |
| 10+ | 2.2 EUR |
| 100+ | 1.48 EUR |
| 500+ | 1.17 EUR |
| 1000+ | 1.06 EUR |
| 2000+ | 0.93 EUR |
| BSP613PH6327XTSA1 |
![]() |
Hersteller: INFINEON
Description: INFINEON - BSP613PH6327XTSA1 - Leistungs-MOSFET, p-Kanal, 60 V, 2.9 A, 0.13 ohm, SOT-223, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 2.9A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 1.8W
Bauform - Transistor: SOT-223
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.13ohm
SVHC: No SVHC (25-Jun-2025)
Description: INFINEON - BSP613PH6327XTSA1 - Leistungs-MOSFET, p-Kanal, 60 V, 2.9 A, 0.13 ohm, SOT-223, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 2.9A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 1.8W
Bauform - Transistor: SOT-223
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.13ohm
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 14272 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 55+ | 4.57 EUR |
| 87+ | 2.69 EUR |
| 131+ | 1.64 EUR |
| 500+ | 1.32 EUR |
| 1000+ | 1.17 EUR |
| 5000+ | 1.07 EUR |
| BSP613PH6327XTSA1 |
![]() |
Hersteller: Infineon Technologies
Trans MOSFET P-CH 60V 2.9A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101
Trans MOSFET P-CH 60V 2.9A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)






