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BSR12,215 NXP Semiconductors

Hersteller: NXP Semiconductors
Trans GP BJT PNP 15V 0.1A 250mW 3-Pin TO-236AB T/R

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Technische Details BSR12,215 NXP Semiconductors

Description: TRANS PNP 15V 0.1A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 50nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 1V, Frequency - Transition: 1.5GHz, Supplier Device Package: SOT-23 (TO-236AB), Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 15 V, Power - Max: 250 mW.

Weitere Produktangebote BSR12,215

Foto	Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit	Preis ohne MwSt
	BSR12,215	Hersteller : NXP USA Inc.	Description: TRANS PNP 15V 0.1A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 1V Frequency - Transition: 1.5GHz Supplier Device Package: SOT-23 (TO-236AB) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 250 mW	Produkt ist nicht verfügbar