BSR16-QR Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: IC
Qualification: AEC-Q101
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 600 mA
Grade: Automotive
Supplier Device Package: TO-236AB
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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Technische Details BSR16-QR Nexperia USA Inc.
Description: IC, Qualification: AEC-Q101, Power - Max: 250 mW, Voltage - Collector Emitter Breakdown (Max): 60 V, Current - Collector (Ic) (Max): 600 mA, Grade: Automotive, Supplier Device Package: TO-236AB, Frequency - Transition: 200MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Current - Collector Cutoff (Max): 10nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote BSR16-QR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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BSR16-QR | Hersteller : Nexperia | Bipolar Transistors - BJT 60 V, 600 mA, PNP switching transistor |
Produkt ist nicht verfügbar |