BSS119NH7978XTSA1 Infineon Technologies

Description: SMALL SIGNAL N-CHANNEL MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Bulk, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PG-SOT23-3-5, Vgs(th) (Max) @ Id: 2.3V @ 13µA, Power Dissipation (Max): 500mW (Ta), Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V, Current - Continuous Drain (Id) @ 25°C: 190mA (Ta), FET Type: N-Channel.