BSS123 JCET

Hersteller: Siemens
Transistoren > MOSFET N-CH
Gehäuse: SOT-23
Uds,V: 100
Idd,A: 0.17
Rds(on), Ohm: 6
Ciss, pF/Qg, nC: 55/1.78
JHGF: SMD

Hersteller: ON Semiconductor
Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R

Hersteller: HT SEMI
Transistor N-Channel MOSFET; 100V; +/-20V; 170mA; 10Ohm; 360mW; -55°C~150°C; BSS123 SA SOT23 HT SEMI TBSS123 HT
Anzahl je Verpackung: 3000 Stücke

Hersteller: CHIPNOBO
Transistor N-Channel MOSFET; 100V; 20V; 10Ohm; 170mA; 350mW; -55°C ~ 150°C; Equivalent: BSS123,215; BSS123LT1G; BSS123LT3G; BSS123LT7G; BSS123NH6327XTSA1; BSS123NH6433XTMA1; BSS123-7-F; BSS123-TP; BSS123 CHIPNOBO TBSS123 CNB
Anzahl je Verpackung: 1000 Stücke

Hersteller: HXY MOSFET
Transistor N-Channel MOSFET; 100V; 20V; 9Ohm; 170mA; 350mW; -55°C ~ 150°C; Equivalent: BSS123,215; BSS123LT1G; BSS123LT3G; BSS123LT7G; BSS123NH6327XTSA1; BSS123NH6433XTMA1; BSS123-7-F; BSS123-TP; BSS123 HXY MOSFET TBSS123 HXY
Anzahl je Verpackung: 500 Stücke

Hersteller: GALAXY
Transistor N-Channel MOSFET; 100V; 20V; 10Ohm; 170mA; 350mW; -55°C ~ 150°C; Equivalent: BSS123,215; BSS123LT1G; BSS123LT3G; BSS123LT7G; BSS123NH6327XTSA1; BSS123NH6433XTMA1; BSS123-7-F; BSS123-TP; BSS123 GALAXY TBSS123 GAL
Anzahl je Verpackung: 500 Stücke

Hersteller: Fairchild
N-MOSFET 100V 170mA 6Ω 360mW BSS123 Fairchild TBSS123 FAI
Anzahl je Verpackung: 250 Stücke

Hersteller: ON Semiconductor
Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R

Hersteller: ON Semiconductor
Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R

Hersteller: ONSEMI
Description: ONSEMI - BSS123 - Leistungs-MOSFET, n-Kanal, 100 V, 170 mA, 6 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 170mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 1.7V
Verlustleistung: 360mW
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 6ohm

Hersteller: ONSEMI
Description: ONSEMI - BSS123 - Leistungs-MOSFET, n-Kanal, 100 V, 170 mA, 6 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 170mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 1.7V
Verlustleistung: 360mW
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 6ohm

Hersteller: ONSEMI
Description: ONSEMI - BSS123 - Leistungs-MOSFET, n-Kanal, 100 V, 170 mA, 6 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 170mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 1.7V
Verlustleistung: 360mW
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 6ohm

Hersteller: HT Jinyu Semiconductor
N-Channel Enhancement Mode MOSFET

Hersteller: Microdiode Electronics (MDD)
BSS123

Hersteller: Fairchild/ON Semiconductor
N-канальний ПТ, Udss, В = 100, Id = 170 мА, Ptot, Вт = 0,36, Тип монт. = smd, Ciss, пФ @ Uds, В = 73 @ 25, Qg, нКл = 2,5 @ 10 В, Rds = 6 Ом @ 170 мА, 10 В, Tексп, °C = -55...+150, Ugs(th) = 2 В @ 1000 мкА,... Транзистори Корпус: SOT-23-3 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke

Hersteller: ON Semiconductor
Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R

Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 0.19A, 100
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 150mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 31.6 pF @ 50 V

Hersteller: MDD(Microdiode Electronics)
Transistor N-Channel MOSFET; 100V; 20V; 5,5Ohm; 200mA; 350mW; -50°C~150°C; BSS123 SOT23 MDD(MICRODIODE) TBSS123 MDD
Anzahl je Verpackung: 500 Stücke

Hersteller: REALCHIP
Transistor N-Channel MOSFET; 100V; 20V; 10Ohm; 170mA; 350mW; -55°C ~ 150°C; Equivalent: BSS123,215; BSS123LT1G; BSS123LT3G; BSS123LT7G; BSS123NH6327XTSA1; BSS123NH6433XTMA1; BSS123-7-F; BSS123-TP; BSS123 SOT23 RealChip TBSS123 REA
Anzahl je Verpackung: 500 Stücke

Hersteller: YFW
Tranzystor N-Channel MOSFET; 100V; 20V; 6Ohm; 170mA; 225mW; -55°C ~ 150°C; 10000m?; BSS123-YAN BSS123 TBSS123 c
Anzahl je Verpackung: 3000 Stücke

Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14 pF @ 50 V

Hersteller: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 100V 150MA 6@10V,120MA 250MW 2.8
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA
Rds On (Max) @ Id, Vgs: 6Ohm @ 120mA, 10V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V

Hersteller: SLKOR
Transistor N-Channel MOSFET; 100V; 20V; 6Ohm; 150mA; 250mW; -55°C ~ 150°C; Equivalent: BSS123,215; BSS123LT1G; BSS123LT3G; BSS123LT7G; BSS123NH6327XTSA1; BSS123NH6433XTMA1; BSS123-7-F; BSS123-TP; BSS123 SLKOR TBSS123 SLK
Anzahl je Verpackung: 500 Stücke

Hersteller: UMW
Transistor N-Channel MOSFET; 100V; 20V; 10Ohm; 170mA; 350mW; -55°C ~ 150°C; Equivalent: BSS123,215; BSS123LT1G; BSS123LT3G; BSS123LT7G; BSS123NH6327XTSA1; BSS123NH6433XTMA1; BSS123-7-F; BSS123-TP; BSS123 UMW TBSS123 UMW
Anzahl je Verpackung: 500 Stücke

Hersteller: UMW
Transistor N-Channel MOSFET; 100V; 20V; 10Ohm; 170mA; 350mW; -55°C ~ 150°C; Equivalent: BSS123,215; BSS123LT1G; BSS123LT3G; BSS123LT7G; BSS123NH6327XTSA1; BSS123NH6433XTMA1; BSS123-7-F; BSS123-TP; BSS123 UMW TBSS123 UMW
Anzahl je Verpackung: 500 Stücke

Hersteller: SHIKUES
Transistor N-Channel MOSFET; 100V; 100V; 20V; 10Ohm; 170mA; 300mW; -55°C ~ 150°C; Equivalent: BSS123,215; BSS123LT1G; BSS123LT3G; BSS123LT7G; BSS123NH6327XTSA1; BSS123NH6433XTMA1; BSS123-7-F; BSS123-TP; BSS123 SHIKUES TBSS123 SHK
Anzahl je Verpackung: 500 Stücke

Hersteller: JSMicro Semiconductor
Transistor N-Channel MOSFET; 100V; 20V; 10Ohm; 170mA; 350mW; -55°C ~ 150°C; Equivalent: BSS123,215; BSS123LT1G; BSS123LT3G; BSS123LT7G; BSS123NH6327XTSA1; BSS123NH6433XTMA1; BSS123-7-F; BSS123-TP; BSS123 JSMICRO TBSS123 JSM
Anzahl je Verpackung: 500 Stücke

Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 0.16A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.16A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5.5Ω
Mounting: SMD
Gate charge: 2.5nC
Kind of package: reel; tape
Kind of channel: enhancement

Hersteller: onsemi
Description: MOSFET N-CH 100V 170MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14 pF @ 25 V

Hersteller: NextGen Components
Description: MOSFET N-CH 100V 0.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 50 V

Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14 pF @ 50 V

Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Gate charge: 2.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level

Hersteller: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 100V 150MA 6@10V,120MA 250MW 2.8
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA
Rds On (Max) @ Id, Vgs: 6Ohm @ 120mA, 10V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V

Hersteller: UMW
Description: MOSFET N-CH 100V 170MA SOT23
Packaging: Cut Tape (CT)

Hersteller: onsemi
MOSFETs SOT-23 N-CH LOGIC

Hersteller: onsemi
Description: MOSFET N-CH 100V 170MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14 pF @ 25 V

Hersteller: Analog Power Inc.
Description: MOSFET N-CH 100V 0.8A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: SOT-23

Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 0.19A, 100
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 150mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 31.6 pF @ 50 V