BSS126H6327XTSA2 Infineon Technologies
Hersteller: Infineon Technologies
Trans MOSFET N-CH 600V 0.021A 3-Pin SOT-23 T/R Automotive AEC-Q101
| Anzahl | Preis |
|---|---|
| 3000+ | 0.14 EUR |
| 6000+ | 0.12 EUR |
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Technische Details BSS126H6327XTSA2 Infineon Technologies
Description: MOSFET N-CH 600V 21MA SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Depletion Mode, Current - Continuous Drain (Id) @ 25°C: 21mA (Ta), Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 2.7V @ 8µA, Supplier Device Package: PG-SOT23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 0V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BSS126H6327XTSA2 nach Preis ab 0.12 EUR bis 0.99 EUR
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BSS126H6327XTSA2 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 0.021A 3-Pin SOT-23 T/R Automotive AEC-Q101 |
auf Bestellung 309000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS126H6327XTSA2 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 21MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.7V @ 8µA Supplier Device Package: PG-SOT23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS126H6327XTSA2 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 0.021A 3-Pin SOT-23 T/R Automotive AEC-Q101 |
auf Bestellung 6084 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS126H6327XTSA2 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 0.021A 3-Pin SOT-23 T/R Automotive AEC-Q101 |
auf Bestellung 5960 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS126H6327XTSA2 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23 Case: SOT23 Mounting: SMD Type of transistor: N-MOSFET Technology: SIPMOS™ Drain current: 21mA Power dissipation: 0.5W On-state resistance: 700Ω Gate-source voltage: ±20V Drain-source voltage: 600V Polarisation: unipolar Kind of channel: depletion |
auf Bestellung 2213 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS126H6327XTSA2 | Hersteller : Infineon Technologies |
MOSFETs N-Ch 600V 21mA SOT-23-3 |
auf Bestellung 358 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS126H6327XTSA2 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 21MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.7V @ 8µA Supplier Device Package: PG-SOT23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 12075 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSS126H6327XTSA2 | Hersteller : INFINEON |
Description: INFINEON - BSS126H6327XTSA2 - MOSFET, N-KANAL, 600V, 21MA, SOT23 tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 21mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 500ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 3789 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS126H6327XTSA2 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 0.021A 3-Pin SOT-23 T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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| BSS126H6327XTSA2 | Hersteller : Infineon |
Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23 Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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| BSS126H6327XTSA2 | Hersteller : Infineon Technologies |
N-канальний ПТ, Udss, В = 600, Id = 21 мА, Ciss, пФ @ Uds, В = 28 @ 25, Qg, нКл = 2,1 @ 5 В, Rds = 500 @ 16 мА, 10 В, Ugs(th) = 2,7 @ 8 мкА, Р, Вт = 0,5, Тексп, °C = -55...+150, Тип монт. = SMD,... Група товару: Транзистори Корпус: SOT-23-3 Од. вим: шт Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |